Transistor sambungan dwikutub: Béda antara owahan
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|prinsip_kerja=
|komponen_sejenis=[[FET]]
|penemu=[[John Bardeen]], [[Walter Houser Brattain]] dan [[William Shockley]] ([[
|pembuatan_pertama=Laboratorium Telepon Bell
|simbol=[[Gambar:Icon of Bipolar transistor.png|jmpl]]
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}}
'''Transistor pertemuan dwikutub''' ('''BJT''') inggih punika salah satunggaling jinis saking [[transistor]]. inggih punika pèranti tiga-saluran ingkang kadamèl saking bahan [[semikonduktor]] terkotori. Dipun asmani ''dwikutub'' amargi operasinipun nyrètaaknè saé [[elektron]] utawi [[lubang elektron]], berlawanan kaliyan transistor ''ekakutub'' kadasta [[FET]] ingkang namung ngginaakèn salah satunggaling pembawa. Utawi pérangan alit saking arus transistor inggih punika [[pembawa mayoritas]], manawi
== Perkenalan ==
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=== Pengendalian tegangan, arus lan muatan ===
Arus kolektor-emitor saged dipuntingali dados terkendali arus basis-emitor (kendali arus) utawi tegangan basis-emitor (kendali tegangan). Pandangan kasebut gegayutan kaliyan gayutan arus-tegangan saking pertemuan basis-emitor, ing pundhi namung meniks kurva arus-tegangan eksponensial biyasa saking diode pertemuan p-n.<ref name="hh">{{cite book|author=[[Paul Horowitz]] and [[Winfield Hill]]|title=[[The Art of Electronics]]|edition=2nd|year=1989|publisher=Cambridge University Press|isbn=9780521370950|url=http://books.google.com/books?id=bkOMDgwFA28C&pg=PA113&dq=bjt+charge+current+voltage+control+inauthor:horowitz+inauthor:hill&as_brr=0&ei=A33kRuT6Co3goAKF5pSqCw&sig=EmoHsk3zMEtvV1VYKR65A4I1SCM}}</ref>
Penjelasan fisika kanggé arus kolektor inggih punika jumlah muatan pembawa minoritas ing laladan basis.<ref name=hh/><ref>{{cite book|title=Semiconductor Device Physics and Simulation|author=Juin Jei Liou and Jiann S. Yuan|publisher=Springer|year=1998|isbn=0306457245|url=http://books.google.com/books?id=y343FTN1TU0C&pg=PA166&dq=charge-controlled+bjt+physics&as_brr=0&ei=l9viRqilEIjopQL_i6WFDg&sig=vXciSaFRmNUmg3KIhmBX7DCiVOA}}</ref><ref>{{cite book|title=Transistor Manual|author=General Electric|edition=6th|year=1962|page=12}} "If the principle of space charge neutrality is used in the analysis of the transistor, it is evident that the collector current is controlled by means of the positive charge (hole concentration) in the base region.... When a transistor is used at higher frequencies, the fundamental limitation is the time it takes the carriers to diffuse across the base region..." (same in 4th and 5th editions)</ref> Model mendetail dari kerja transistor, [[model Gummel–Poon]], menghitung distribusi dari muatan tersebut
Ing désain sirkuit analog, pandangan kendali arus asring dipun-ginakaken amargi punika linier. Arus kolektor kinten-kinten <math>\beta_F</math> kali lipat saking arus basis. Pinten-pinten sirkuit
=== Parameter ''alfa'' (α) lan ''beta'' (β) transistor ===
Perbandingan elektron igkang betah ngelintasi basis lan gayuh kolektor inggih punika ukuran saking efisiensi transistor. Pengotoran cerat ing laladan emitor lan pengotoran ringan ing laladan basis nyebabaken langkung kathah elektron ingkang dipuninjeksiaken saking emitor ing basis manawi lubang ingkang diinjeksiaken saking basis ing emitor. Penguatan arus moda tunggal emitor dipunwakili déning β<sub>F</sub> atau h<sub>fe</sub>, punika kinten-kinten sami kaliyan perbandingan arus DC kolektor kaliyan arus DC basis ing laladan aktif-maju. Punika biasanipun langkung ageng saking 100 kanggé transistor isyarat alit, ananging bisa sangat rendah, mliginipun ing transistor ingkang dipundésain kanggé penggunaan daya inggil. Parameter ingkang wigati
Alfa lan beta langkung tepate gegayutan kaliyan rumus makaten (transistor NPN):
::<math>\alpha_T = \frac{I_{\text{C}}}{I_{\text{E}}}</math>
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[[Gambar:npn BJT cross section.PNG|jmpl|thumb|Irisan transistor NPN yang disederhanakan]]
[[Gambar:Transistor-die-KSY34.jpg|jmpl|thumb|Kepingan transistor NPN frekuensi tinggi KSY34, basis dan emitor disambungkan melalui ikatan kawat]]
BJT kapérang saking tiga laladan semikonduktor ingkang
== Cathetan suku ==
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