Transistor sambungan dwikutub: Béda antara owahan
Konten dihapus Konten ditambahkan
éjaan, replaced: kasebut → mau (3) |
éjaan, replaced: biasanipun → limrahipun (4), kadasta → kados ta (3) |
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'''Transistor pertemuan dwikutub''' ('''BJT''') inggih punika salah satunggaling jinis saking [[transistor]]. inggih punika pèranti tiga-saluran ingkang kadamèl saking bahan [[semikonduktor]] terkotori. Dipun asmani ''dwikutub'' amargi operasinipun nyrètaaknè saé [[elektron]] utawi [[lubang elektron]], berlawanan kaliyan transistor ''ekakutub''
== Perkenalan ==
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=== Pengendalian tegangan, arus lan momotan ===
Arus kolektor-emitor saged dipuntingali dados terkendali arus basis-emitor (kendali arus) utawi tegangan basis-emitor (kendali tegangan). Pandangan mau gegayutan kaliyan gayutan arus-tegangan saking pertemuan basis-emitor, ing pundhi namung meniks kurva arus-tegangan eksponensial biyasa saking diode pertemuan p-n.<ref name="hh">{{cite book|author=[[Paul Horowitz]] and [[Winfield Hill]]|title=[[The Art of Electronics]]|edition=2nd|year=1989|publisher=Cambridge University Press|isbn=9780521370950|url=http://books.google.com/books?id=bkOMDgwFA28C&pg=PA113&dq=bjt+charge+current+voltage+control+inauthor:horowitz+inauthor:hill&as_brr=0&ei=A33kRuT6Co3goAKF5pSqCw&sig=EmoHsk3zMEtvV1VYKR65A4I1SCM}}</ref>
Penjelasan fisika kanggé arus kolektor inggih punika jumlah momotan pembawa minoritas ing laladan basis.<ref name=hh/><ref>{{cite book|title=Semiconductor Device Physics and Simulation|author=Juin Jei Liou and Jiann S. Yuan|publisher=Springer|year=1998|isbn=0306457245|url=http://books.google.com/books?id=y343FTN1TU0C&pg=PA166&dq=charge-controlled+bjt+physics&as_brr=0&ei=l9viRqilEIjopQL_i6WFDg&sig=vXciSaFRmNUmg3KIhmBX7DCiVOA}}</ref><ref>{{cite book|title=Transistor Manual|author=General Electric|edition=6th|year=1962|page=12}} "If the principle of space charge neutrality is used in the analysis of the transistor, it is evident that the collector current is controlled by means of the positive charge (hole concentration) in the base region.... When a transistor is used at higher frequencies, the fundamental limitation is the time it takes the carriers to diffuse across the base region..." (same in 4th and 5th editions)</ref> Model mendetail dari kerja transistor, [[model Gummel–Poon]], menghitung distribusi dari momotan tersebut kanthi eksplisit untuk menjelaskan perilaku transistor dengan lebih tepat.<ref>{{cite book|title=Semiconductor Device Modeling with Spice|author=Paolo Antognetti and Giuseppe Massobrio|publisher=McGraw–Hill Professional|year=1993|isbn=0071349553|url=http://books.google.com/books?id=5IBYU9xrGaIC&pg=PA96&dq=gummel-poon+charge+model&as_brr=3&ei=v4TkRp-4Gp2cowLM7bnCCw&sig=vYrycIhlQKCq7VmoK231pjYXPyU#PPA98,M1}}</ref> Pandangan ngenai kendali-momotan kaliyan gampil nangani transistor-foto, ing pundhi mbeta minoritas ing laladan basis dipunbangkitaken déning penyerapan foton, lan nangani pematian dinamik utawi wekdal pulih, ing pundhi gumantung ing penggabungan malih momotan ing laladan basis. manawi makaten, amargi momotan basis punika boten isyarat ingkang saged dipunukur ing saluran, pandangan kendali arus lan tegangan
Ing désain sirkuit analog, pandangan kendali arus asring dipun-ginakaken amargi punika linier. Arus kolektor kinten-kinten <math>\beta_F</math> kali lipat saking arus basis. Pinten-pinten sirkuit dhasar saged dipundésain kaliyan mengasumsiaken manawi tegangan emitor-basis kinten-kinten ajeg, lan arus kolektor inggih punika beta kali lipat saking arus basis. Manawi makaten, kanggé ndésain sirkuit BJT kaliyan akurat lan saged dipunandalaken, dipunbetahaken model kendali-tegangan (dados tuladha [[model Ebers–Moll]])<ref name=hh/>. Model kendali-tegangan mbetahaken fungsi eksponensial ingkang kedah dipunperhitungaken, manawi punika dipunlinieraken, transistor saged dimodelaken dados sebuah transkonduktansi,
=== Parameter ''alfa'' (α) lan ''beta'' (β) transistor ===
Perbandingan elektron igkang betah ngelintasi basis lan gayuh kolektor inggih punika ukuran saking efisiensi transistor. Pengotoran cerat ing laladan emitor lan pengotoran ringan ing laladan basis njalari langkung kathah elektron ingkang dipuninjeksiaken saking emitor ing basis manawi lubang ingkang diinjeksiaken saking basis ing emitor. Penguatan arus moda tunggal emitor dipunwakili déning β<sub>F</sub> atau h<sub>fe</sub>, punika kinten-kinten sami kaliyan perbandingan arus DC kolektor kaliyan arus DC basis ing laladan aktif-maju. Punika
Alfa lan beta langkung tepate gegayutan kaliyan rumus makaten (transistor NPN):
::<math>\alpha_T = \frac{I_{\text{C}}}{I_{\text{E}}}</math>
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