Transistor sambungan dwikutub: Béda antara owahan
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Larik 19:
[[Gambar:NPN BJT Basic Operation (Active).svg|thumb|NPN BJT dengan pertemuan E–B dipanjar maju dan pertemuan B–C dipanjar mundur]]
Transistor NPN saged dipunanggep dados kalih diode adu punggung tunggal anode. Ing ngginaaken biasa, kapanggihan p-n emitor-basis dipunpanjar majeng lan kapanggihan basis-kolektor dipunpanjar mundur. Ing transistor NPN, dados tuladha, menawi tegangan positif dipuntepang ing kapanggihan basis-emitor, kasaimbangan ing antawisipun mbeta terbangkitkan kalor lan medan listrik nolak ing daerah pemiskinan dados mboten seimbang, menawi elektron terusik kalor kangge mlebet ing daerah basis. Elektron kasebut ngembara (utawi nyebar) ngelampahi basis saking daerah konsentrasi inggil cerak emitor nuju konsentrasi rendah cerak kolektor. Elektron ing basis dipunasmani mbeta minoritas amargi basis dipunkotori dados tipe-p ingkang dadosaken lubang dados mbeta mayoritas ing basis.
=== Pengendalian tegangan, arus lan muatan ===
Arus kolektor-emitor saged dipuntingali dados terkendali arus basis-emitor (kendali arus) utawi tegangan basis-emitor (kendali tegangan). Pandangan kasebut gegayutan kaliyan hubungan arus-tegangan saking pertemuan basis-emitor, ing pundhi namung meniks kurva arus-tegangan eksponensial biasa saking diode pertemuan p-n.<ref name="hh">{{cite book|author=[[Paul Horowitz]] and [[Winfield Hill]]|title=[[The Art of Electronics]]|edition=2<sup>nd</sup>|year=1989|publisher=Cambridge University Press|isbn=9780521370950|url=http://books.google.com/books?id=bkOMDgwFA28C&pg=PA113&dq=bjt+charge+current+voltage+control+inauthor:horowitz+inauthor:hill&as_brr=0&ei=A33kRuT6Co3goAKF5pSqCw&sig=EmoHsk3zMEtvV1VYKR65A4I1SCM}}</ref>
Penjelasan fisika kangge arus kolektor inggih punika jumlah muatan pembawa minoritas ing daerah basis.<ref name=hh/><ref>{{cite book|title=Semiconductor Device Physics and Simulation|author=Juin Jei Liou and Jiann S. Yuan|publisher=Springer|year=1998|isbn=0306457245|url=http://books.google.com/books?id=y343FTN1TU0C&pg=PA166&dq=charge-controlled+bjt+physics&as_brr=0&ei=l9viRqilEIjopQL_i6WFDg&sig=vXciSaFRmNUmg3KIhmBX7DCiVOA}}</ref><ref>{{cite book|title=Transistor Manual|author=General Electric|edition=6<sup>th</sup>|year=1962|page=12}} "If the principle of space charge neutrality is used in the analysis of the transistor, it is evident that the collector current is controlled by means of the positive charge (hole concentration) in the base region. ... When a transistor is used at higher frequencies, the fundamental limitation is the time it takes the carriers to diffuse across the base region..." (same in 4<sup>th</sup> and 5<sup>th</sup> editions)</ref> Model mendetail dari kerja transistor, [[model Gummel–Poon]], menghitung distribusi dari muatan tersebut secara eksplisit untuk menjelaskan perilaku transistor dengan lebih tepat.<ref>{{cite book|title=Semiconductor Device Modeling with Spice|author=Paolo Antognetti and Giuseppe Massobrio|publisher=McGraw–Hill Professional|year=1993|isbn=0071349553|url=http://books.google.com/books?id=5IBYU9xrGaIC&pg=PA96&dq=gummel-poon+charge+model&as_brr=3&ei=v4TkRp-4Gp2cowLM7bnCCw&sig=vYrycIhlQKCq7VmoK231pjYXPyU#PPA98,M1}}</ref> Pandangan ngenai kendali-muatan kaliyan gampil nangani transistor-foto, ing pundhi mbeta minoritas ing daerah basis dipunbangkitaken dening penyerapan foton, lan nangani pematian dinamik utawi wekdal pulih, ing pundhi gumantung ing penggabungan malih muatan ing daerah basis. menawi mekaten, amargi muatan basis menika mboten isyarat ingkang saged dipunukur ing saluran, pandangan kendali arus lan tegangan biasanipun dipunginaaken ing desain lan analisis sirkuit.
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